N-channel Power MOSFET featuring 200V drain-source breakdown voltage and 34A continuous drain current. Offers a low 75mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-247 package, this component supports a maximum power dissipation of 180W and operates within a temperature range of -65°C to 150°C. Key electrical characteristics include 3.3nF input capacitance, 18ns fall time, and 30ns turn-on delay time.
PackageTO-247
Current Rating34A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STW34NB20 technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
34A
Current Rating
34A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
75mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
75mR
Fall Time
18ns
Gate to Source Voltage (Vgs)
30V
Height
20.15mm
Input Capacitance
3.3nF
Lead Free
Lead Free
Length
15.75mm
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
180W
Mount
Through Hole
Package Quantity
600
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
180W
Rds On Max
75mR
RoHS Compliant
Yes
Series
PowerMESH™
Turn-On Delay Time
30ns
DC Rated Voltage
200V
Width
5.15mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STW34NB20 Datasheet
Download the complete datasheet for Stmicroelectronics STW34NB20 to view detailed technical specifications.
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