N-channel Power MOSFET featuring 200V drain-source breakdown voltage and 34A continuous drain current. Offers a low 75mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-247 package, this component supports a maximum power dissipation of 180W and operates within a temperature range of -65°C to 150°C. Key electrical characteristics include 3.3nF input capacitance, 18ns fall time, and 30ns turn-on delay time.
Stmicroelectronics STW34NB20 technical specifications.
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 34A |
| Current Rating | 34A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 75mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 75mR |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.15mm |
| Input Capacitance | 3.3nF |
| Lead Free | Lead Free |
| Length | 15.75mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 180W |
| Mount | Through Hole |
| Package Quantity | 600 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 180W |
| Rds On Max | 75mR |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Turn-On Delay Time | 30ns |
| DC Rated Voltage | 200V |
| Width | 5.15mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STW34NB20 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.