N-channel Power MOSFET featuring 550V drain-source breakdown voltage and 33A continuous drain current. This component offers a low 80mΩ drain-source on-resistance and 190W maximum power dissipation. Encased in a TO-247 package for through-hole mounting, it operates within a temperature range of -55°C to 150°C. The MOSFET includes a 25V gate-source voltage rating and 2.95nF input capacitance.
Stmicroelectronics STW36N55M5 technical specifications.
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 33A |
| Drain to Source Breakdown Voltage | 550V |
| Drain to Source Resistance | 80mR |
| Drain to Source Voltage (Vdss) | 550V |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 20.15mm |
| Input Capacitance | 2.95nF |
| Lead Free | Lead Free |
| Length | 15.75mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 190W |
| Radiation Hardening | No |
| Rds On Max | 80mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ V |
| Turn-Off Delay Time | 56ns |
| Turn-On Delay Time | 56ns |
| Width | 5.15mm |
| RoHS | Compliant |
No datasheet is available for this part.
