N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 30A continuous drain current. Offers a low 95mΩ maximum drain-source on-resistance and 190W power dissipation. Designed for through-hole mounting in a TO-247 package, this component boasts a 9ns fall time and 66ns turn-on/off delay times. Operates within a temperature range of -55°C to 150°C and is RoHS compliant.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power190W
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Technical Specifications
Stmicroelectronics STW38N65M5 technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
30A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
95mR
Drain to Source Voltage (Vdss)
650V
Drain-source On Resistance-Max
95mR
Fall Time
9ns
Gate to Source Voltage (Vgs)
25V
Height
20.15mm
Input Capacitance
3nF
Lead Free
Lead Free
Length
15.75mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
190W
Mount
Through Hole
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
190W
Radiation Hardening
No
Rds On Max
95mR
RoHS Compliant
Yes
Series
MDmesh™ V
Turn-Off Delay Time
66ns
Turn-On Delay Time
66ns
Width
5.15mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STW38N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STW38N65M5 to view detailed technical specifications.
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