N-channel Power MOSFET featuring 200V drain-source breakdown voltage and 45mΩ maximum drain-source resistance. This component offers a continuous drain current of 40A and a maximum power dissipation of 160W. Designed for through-hole mounting, it is available in a TO-247 package and boasts fast switching characteristics with turn-on delay time of 20ns and fall time of 22ns. RoHS compliant and lead-free, it operates within a temperature range of -55°C to 150°C.
PackageTO-247
Current Rating40A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STW40NF20 technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
40A
Current Rating
40A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
45mR
Drain to Source Voltage (Vdss)
200V
Fall Time
22ns
Gate to Source Voltage (Vgs)
20V
Height
20.15mm
Input Capacitance
2.5nF
Lead Free
Lead Free
Length
15.75mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
160W
Mount
Through Hole
Number of Elements
1
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
160W
Radiation Hardening
No
Rds On Max
45mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™
Threshold Voltage
3V
Turn-Off Delay Time
74ns
Turn-On Delay Time
20ns
DC Rated Voltage
200V
Width
5.15mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STW40NF20 Datasheet
Download the complete datasheet for Stmicroelectronics STW40NF20 to view detailed technical specifications.
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