N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 35A continuous drain current. Offers low 78mΩ maximum drain-source on-resistance and 210W maximum power dissipation. Designed for through-hole mounting in a TO-247 package, this component operates from -55°C to 150°C and is RoHS compliant.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power208W
Quick Jump:
Technical Specifications
Stmicroelectronics STW45N65M5 technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
35A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
78mR
Drain to Source Voltage (Vdss)
650V
Drain-source On Resistance-Max
78MR
Gate to Source Voltage (Vgs)
25V
Height
20.15mm
Input Capacitance
3.375nF
Lead Free
Lead Free
Length
15.75mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
210W
Mount
Through Hole
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
208W
Radiation Hardening
No
Rds On Max
78mR
RoHS Compliant
Yes
Series
MDmesh™ V
Turn-Off Delay Time
79.5ns
Turn-On Delay Time
79.5ns
Width
5.15mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STW45N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STW45N65M5 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
