
N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 35A continuous drain current. Offers low 78mΩ maximum drain-source on-resistance and 210W maximum power dissipation. Designed for through-hole mounting in a TO-247 package, this component operates from -55°C to 150°C and is RoHS compliant.
Stmicroelectronics STW45N65M5 technical specifications.
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