N-channel power MOSFET featuring 500V drain-source breakdown voltage and 45A continuous drain current. Offers 100mΩ maximum drain-source on-resistance and 417W maximum power dissipation. This through-hole component is housed in a TO-247 package and operates within a temperature range of -65°C to 150°C. Key switching characteristics include a 26.5ns turn-on delay and 87.7ns fall time.
PackageTO-247
Current Rating45A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STW45NM50 technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
45A
Current Rating
45A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
100mR
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
100mR
Fall Time
87.7ns
Gate to Source Voltage (Vgs)
30V
Height
20.15mm
Input Capacitance
3.7nF
Lead Free
Lead Free
Length
15.75mm
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
417W
Mount
Through Hole
Number of Elements
1
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
417W
Rds On Max
100mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™
Threshold Voltage
4V
Turn-Off Delay Time
21.6ns
Turn-On Delay Time
26.5ns
DC Rated Voltage
500V
Width
5.15mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STW45NM50 Datasheet
Download the complete datasheet for Stmicroelectronics STW45NM50 to view detailed technical specifications.
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