N-channel power MOSFET featuring 500V drain-source breakdown voltage and 45A continuous drain current. Offers 100mΩ maximum drain-source on-resistance and 417W maximum power dissipation. This through-hole component is housed in a TO-247 package and operates within a temperature range of -65°C to 150°C. Key switching characteristics include a 26.5ns turn-on delay and 87.7ns fall time.
PackageTO-247
Current Rating45A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STW45NM50 technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 45A |
| Current Rating | 45A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 100mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 100mR |
| Fall Time | 87.7ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.15mm |
| Input Capacitance | 3.7nF |
| Lead Free | Lead Free |
| Length | 15.75mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 417W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 417W |
| Rds On Max | 100mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 21.6ns |
| Turn-On Delay Time | 26.5ns |
| DC Rated Voltage | 500V |
| Width | 5.15mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STW45NM50 Datasheet
Download the complete datasheet for Stmicroelectronics STW45NM50 to view detailed technical specifications.
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