This N-channel super-junction power MOSFET is rated for 600 V drain-source voltage and 39 A continuous drain current at 25 °C case temperature. It uses ST's MDmesh M6 technology to provide 61 mΩ typical and 69 mΩ maximum on-resistance at VGS = 10 V, with low gate resistance and fast switching behavior supported by an extra driving source pin. The device is housed in a TO247-4 package, is 100% avalanche tested, and includes zener protection. It is specified for operation up to 150 °C junction temperature and is intended for switching applications including LLC converters and boost PFC converters.
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| Transistor Type | N-channel |
| Drain-Source Breakdown Voltage | 600V |
| Continuous Drain Current at 25°C | 39A |
| Continuous Drain Current at 100°C | 25A |
| Pulsed Drain Current | 140A |
| Gate-Source Voltage | ±25V |
| On-Resistance Typ | 61mΩ |
| On-Resistance Max | 69mΩ |
| Gate Threshold Voltage Typ | 4V |
| Input Capacitance | 2578pF |
| Output Capacitance | 202pF |
| Reverse Transfer Capacitance | 3.1pF |
| Total Gate Charge | 57nC |
| Power Dissipation | 250W |
| Junction-Case Thermal Resistance | 0.5°C/W |
| Avalanche Energy | 950mJ |
| Operating Junction Temperature Max | 150°C |
| Package Type | TO247-4 |
| REACH | Compliant |
| Military Spec | False |
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