N-channel Power MOSFET featuring 1500V drain-source breakdown voltage and 4A continuous drain current. This through-hole component offers a low 7 Ohm drain-source on-resistance and 160W maximum power dissipation. Designed with a TO-247 package, it operates within a temperature range of -55°C to 150°C and includes fast switching characteristics with a 35ns turn-on delay and 45ns fall time. RoHS compliant and lead-free.
PackageTO-247
Current Rating4A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STW4N150 technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
4A
Current Rating
4A
Drain to Source Breakdown Voltage
1.5kV
Drain to Source Resistance
7R
Drain to Source Voltage (Vdss)
1.5kV
Drain-source On Resistance-Max
7R
Fall Time
45ns
Gate to Source Voltage (Vgs)
30V
Height
20.15mm
Input Capacitance
1.3nF
Lead Free
Lead Free
Length
15.75mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
160W
Mount
Through Hole
Number of Elements
1
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
160W
Radiation Hardening
No
Rds On Max
7R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerMESH™
Threshold Voltage
4V
Turn-Off Delay Time
45ns
Turn-On Delay Time
35ns
DC Rated Voltage
1.5kV
Width
5.15mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STW4N150 Datasheet
Download the complete datasheet for Stmicroelectronics STW4N150 to view detailed technical specifications.
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