N-channel power MOSFET featuring 650V drain-source breakdown voltage and 42A continuous drain current. Offers a low 63mΩ typical drain-source on-resistance. Designed for through-hole mounting in a TO-247-4 package, this component boasts fast switching characteristics with an 8ns fall time. Maximum power dissipation is rated at 250W, with operation from -55°C to 150°C.
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Stmicroelectronics STW57N65M5-4 technical specifications.
| Package/Case | TO-247-4 |
| Continuous Drain Current (ID) | 42A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 63mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 21.1mm |
| Input Capacitance | 4.2nF |
| Lead Free | Lead Free |
| Length | 15.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 63mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ V |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 79ns |
| Width | 5.1mm |
| RoHS | Compliant |
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