Automotive-grade N-channel power MOSFET rated for 650 V drain-source voltage and 48 A continuous drain current in a TO-247 package. The device belongs to the MDmesh DM2 fast-recovery diode series and combines 0.058 Ω typical on-resistance with low recovery charge and switching performance suited to high-efficiency converters, bridge topologies, and ZVS phase-shift converters. It is AEC-Q101 qualified, 100% avalanche tested, zener-protected, and specified for operating junction and storage temperatures from -55 °C to 150 °C. Typical dynamic characteristics include 88 nC total gate charge, 4100 pF input capacitance, and 135 ns reverse recovery time at 25 °C.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Stmicroelectronics STW58N65DM2AG datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Transistor Polarity | N-channel |
| Drain-Source Breakdown Voltage | 650V |
| Continuous Drain Current | 48A |
| Continuous Drain Current at 100°C | 30A |
| Pulsed Drain Current | 150A |
| Drain-Source On-Resistance | 0.058 typ / 0.065 maxOhm |
| Gate-Source Voltage | ±25V |
| Total Power Dissipation | 360W |
| Operating Junction Temperature | -55 to 150°C |
| Thermal Resistance Junction-Case | 0.35°C/W |
| Input Capacitance | 4100pF |
| Output Capacitance | 160pF |
| Reverse Transfer Capacitance | 2.5pF |
| Total Gate Charge | 88nC |
| Gate-Source Charge | 22nC |
| Gate-Drain Charge | 37nC |
| Turn-On Delay Time | 28ns |
| Rise Time | 31ns |
| Turn-Off Delay Time | 157ns |
| Fall Time | 7.7ns |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Download the complete datasheet for Stmicroelectronics STW58N65DM2AG to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
