N-channel power MOSFET featuring 100V drain-source breakdown voltage and 19.5mΩ maximum drain-source on-resistance. This through-hole component offers a continuous drain current of 65A and a maximum power dissipation of 150W. Designed with STripFET™ DeepGATE™ technology, it operates within a temperature range of -55°C to 175°C and is packaged in a TO-247 case. Key switching characteristics include a 30ns turn-on delay and a 20ns fall time.
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Stmicroelectronics STW70N10F4 technical specifications.
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 65A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 19.5mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 19.5mR |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.8nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Rds On Max | 19.5mR |
| RoHS Compliant | Yes |
| Series | DeepGATE™, STripFET™ |
| Turn-Off Delay Time | 65ns |
| Turn-On Delay Time | 30ns |
| RoHS | Compliant |
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