N-channel power MOSFET featuring 100V drain-source breakdown voltage and 19.5mΩ maximum drain-source on-resistance. This through-hole component offers a continuous drain current of 65A and a maximum power dissipation of 150W. Designed with STripFET™ DeepGATE™ technology, it operates within a temperature range of -55°C to 175°C and is packaged in a TO-247 case. Key switching characteristics include a 30ns turn-on delay and a 20ns fall time.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power150W
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Technical Specifications
Stmicroelectronics STW70N10F4 technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
65A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
19.5mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
19.5mR
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
5.8nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Through Hole
Number of Elements
1
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
150W
Radiation Hardening
No
Rds On Max
19.5mR
RoHS Compliant
Yes
Series
DeepGATE™, STripFET™
Turn-Off Delay Time
65ns
Turn-On Delay Time
30ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STW70N10F4 Datasheet
Download the complete datasheet for Stmicroelectronics STW70N10F4 to view detailed technical specifications.
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