N-channel Power MOSFET featuring 600V drain-to-source breakdown voltage and 68A continuous drain current. Offers a low 30mΩ typical drain-to-source resistance at 600V. Designed for through-hole mounting in a TO-247 package, this component boasts a maximum power dissipation of 450W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 9ns fall time and 32ns turn-on delay.
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Stmicroelectronics STW70N60M2 technical specifications.
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 68A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 30mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 5.2nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 450W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 450W |
| Radiation Hardening | No |
| Rds On Max | 40mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ II Plus |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 155ns |
| Turn-On Delay Time | 32ns |
| Weight | 1.340411oz |
| RoHS | Compliant |
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