N-channel Power MOSFET, 650V drain-source voltage, 69A continuous drain current, and 32mΩ drain-source resistance at 10V. Features include a 5V gate threshold voltage, 203nC typical gate charge, and 9000pF typical input capacitance. Housed in a 3-pin TO-247 plastic package with through-hole mounting, this single-element device operates from -55°C to 150°C.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STW78N65M5 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-247
Package/Case
TO-247
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
15.75(Max)
Package Width (mm)
5.15(Max)
Package Height (mm)
20.15(Max)
Seated Plane Height (mm)
24.45(Max)
Pin Pitch (mm)
5.45
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-247
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
MDmesh
Maximum Drain Source Voltage
650V
Maximum Gate Source Voltage
±25V
Maximum Continuous Drain Current
69A
Material
Si
Maximum Gate Threshold Voltage
5V
Maximum Drain Source Resistance
32@10VmOhm
Typical Gate Charge @ Vgs
203@10VnC
Typical Gate Charge @ 10V
203nC
Typical Input Capacitance @ Vds
9000@100VpF
Maximum Power Dissipation
450000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SCR76
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
Yes
AEC Qualified
Yes
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Stmicroelectronics STW78N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STW78N65M5 to view detailed technical specifications.
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