N-channel Power MOSFET, 650V drain-source voltage, 69A continuous drain current, and 32mΩ drain-source resistance at 10V. Features include a 5V gate threshold voltage, 203nC typical gate charge, and 9000pF typical input capacitance. Housed in a 3-pin TO-247 plastic package with through-hole mounting, this single-element device operates from -55°C to 150°C.
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Stmicroelectronics STW78N65M5 technical specifications.
| Basic Package Type | Through Hole |
| Package Family Name | TO-247 |
| Package/Case | TO-247 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.75(Max) |
| Package Width (mm) | 5.15(Max) |
| Package Height (mm) | 20.15(Max) |
| Seated Plane Height (mm) | 24.45(Max) |
| Pin Pitch (mm) | 5.45 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-247 |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | MDmesh |
| Maximum Drain Source Voltage | 650V |
| Maximum Gate Source Voltage | ±25V |
| Maximum Continuous Drain Current | 69A |
| Material | Si |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Drain Source Resistance | 32@10VmOhm |
| Typical Gate Charge @ Vgs | 203@10VnC |
| Typical Gate Charge @ 10V | 203nC |
| Typical Input Capacitance @ Vds | 9000@100VpF |
| Maximum Power Dissipation | 450000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | SCR76 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| RoHS Versions | 2011/65/EU, 2015/863 |
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