N-channel SuperMESH™ Power MOSFET featuring 800V drain-source breakdown voltage and 6.2A continuous drain current. This through-hole component offers a low 1.5 Ohm drain-source on-resistance and 140W maximum power dissipation. Designed for high voltage applications, it operates within a -55°C to 150°C temperature range and is packaged in a TO-247 case. Key switching characteristics include a 17ns turn-on delay and 28ns fall time.
PackageTO-247
Current Rating6.2A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STW8NK80Z technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
6.2A
Current Rating
6.2A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
1.5R
Drain to Source Voltage (Vdss)
800V
Fall Time
28ns
Gate to Source Voltage (Vgs)
30V
Height
20.15mm
Input Capacitance
1.32nF
Lead Free
Lead Free
Length
15.75mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
140W
Mount
Through Hole
Number of Elements
1
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
140W
Radiation Hardening
No
Rds On Max
1.5R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH™
Threshold Voltage
3.75V
Turn-Off Delay Time
48ns
Turn-On Delay Time
17ns
DC Rated Voltage
800V
Width
5.15mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STW8NK80Z Datasheet
Download the complete datasheet for Stmicroelectronics STW8NK80Z to view detailed technical specifications.
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