
N-channel SuperMESH™ Power MOSFET featuring 800V drain-source breakdown voltage and 6.2A continuous drain current. This through-hole component offers a low 1.5 Ohm drain-source on-resistance and 140W maximum power dissipation. Designed for high voltage applications, it operates within a -55°C to 150°C temperature range and is packaged in a TO-247 case. Key switching characteristics include a 17ns turn-on delay and 28ns fall time.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Stmicroelectronics STW8NK80Z datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 6.2A |
| Current Rating | 6.2A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 1.5R |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.15mm |
| Input Capacitance | 1.32nF |
| Lead Free | Lead Free |
| Length | 15.75mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 140W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 140W |
| Radiation Hardening | No |
| Rds On Max | 1.5R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Threshold Voltage | 3.75V |
| Turn-Off Delay Time | 48ns |
| Turn-On Delay Time | 17ns |
| DC Rated Voltage | 800V |
| Width | 5.15mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STW8NK80Z to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
