N-channel Power MOSFET, 1500V drain-source breakdown voltage, 8A continuous drain current, and 2.5 Ohm maximum drain-source on-resistance. Features a 320W maximum power dissipation and operates within a -55°C to 150°C temperature range. This through-hole component is housed in a TO-247 package and offers a 4V threshold voltage with typical turn-on delay of 41ns and fall time of 52ns.
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Stmicroelectronics STW9N150 technical specifications.
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Breakdown Voltage | 1.5kV |
| Drain to Source Resistance | 2.5R |
| Drain to Source Voltage (Vdss) | 1.5kV |
| Drain-source On Resistance-Max | 2.5R |
| Fall Time | 52ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.15mm |
| Input Capacitance | 3.255nF |
| Lead Free | Lead Free |
| Length | 15.75mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 320W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 320W |
| Rds On Max | 2.5R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 86ns |
| Turn-On Delay Time | 41ns |
| Width | 5.15mm |
| RoHS | Compliant |
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