N-channel Power MOSFET, 1500V drain-source breakdown voltage, 8A continuous drain current, and 2.5 Ohm maximum drain-source on-resistance. Features a 320W maximum power dissipation and operates within a -55°C to 150°C temperature range. This through-hole component is housed in a TO-247 package and offers a 4V threshold voltage with typical turn-on delay of 41ns and fall time of 52ns.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power320W
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Technical Specifications
Stmicroelectronics STW9N150 technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
8A
Drain to Source Breakdown Voltage
1.5kV
Drain to Source Resistance
2.5R
Drain to Source Voltage (Vdss)
1.5kV
Drain-source On Resistance-Max
2.5R
Fall Time
52ns
Gate to Source Voltage (Vgs)
30V
Height
20.15mm
Input Capacitance
3.255nF
Lead Free
Lead Free
Length
15.75mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
320W
Mount
Through Hole
Number of Elements
1
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
320W
Rds On Max
2.5R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerMESH™
Threshold Voltage
4V
Turn-Off Delay Time
86ns
Turn-On Delay Time
41ns
Width
5.15mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STW9N150 Datasheet
Download the complete datasheet for Stmicroelectronics STW9N150 to view detailed technical specifications.
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