The STW9NB80 is a TO-247 packaged N-channel power MOSFET with a maximum operating temperature range of -65°C to 150°C. It has a continuous drain current of 9A and a drain to source breakdown voltage of 800V. The device features a drain to source resistance of 1 ohm and a power dissipation of 190W. The STW9NB80 is RoHS compliant and available in a 3-pin package quantity of 30, packaged in a rail or tube format.
Stmicroelectronics STW9NB80 technical specifications.
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 1R |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 190W |
| RoHS Compliant | Yes |
| RoHS | Compliant |
No datasheet is available for this part.
