The STX616-AP is a NPN bipolar junction transistor with a collector-emitter breakdown voltage of 500V and a collector-emitter saturation voltage of 500mV. It has a maximum collector current of 1.5A and a maximum power dissipation of 2.8W. The transistor is packaged in a TO-92AP package and is suitable for through-hole mounting. It operates over a temperature range of -65°C to 150°C and is compliant with RoHS regulations.
PackageTO-226-3
MountingThrough Hole
PolarityNPN
Power2.8W
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Technical Specifications
Stmicroelectronics STX616-AP technical specifications.
General
| Package/Case | TO-226-3 |
| Collector Emitter Breakdown Voltage | 500V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 500V |
| Collector-emitter Voltage-Max | 1V |
| Emitter Base Voltage (VEBO) | 12V |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 500V |
| Max Collector Current | 1.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2.8W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Power Dissipation | 2.8W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STX616-AP Datasheet
Download the complete datasheet for Stmicroelectronics STX616-AP to view detailed technical specifications.
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