PNP Bipolar Junction Transistor (BJT) in a TO-92 package. Features a 30V collector-emitter breakdown voltage and a 3A maximum collector current. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 100MHz. Operates across a wide temperature range from -65°C to 150°C with a maximum power dissipation of 900mW. Through-hole mountable and RoHS compliant.
Frequency100MHz
PackageTO-92
Current Rating-3A
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STX790A-AP technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 700mV |
| Current Rating | -3A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 900mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Ammo Pack |
| Polarity | PNP |
| Power Dissipation | 900mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -60V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STX790A-AP Datasheet
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