N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 98A continuous drain current. Offers a low 29mΩ typical drain-source resistance and 625W maximum power dissipation. Designed for through-hole mounting in a TO-247-3 package, this component operates from -55°C to 150°C and is RoHS compliant. Key electrical characteristics include 25V gate-source voltage and 9.6nF input capacitance.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power625W
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Technical Specifications
Stmicroelectronics STY100NM60N technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 98A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 29mR |
| Drain to Source Voltage (Vdss) | 600V |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 20.3mm |
| Input Capacitance | 9.6nF |
| Lead Free | Lead Free |
| Length | 15.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 625W |
| Radiation Hardening | No |
| Rds On Max | 29mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Turn-Off Delay Time | 372ns |
| Turn-On Delay Time | 45ns |
| Width | 5.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STY100NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STY100NM60N to view detailed technical specifications.
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