N-channel Power MOSFET featuring 650V drain-source voltage and 138A continuous drain current. Offers low 0.012 Ohm typical drain-source resistance and 710V breakdown voltage. Designed for through-hole mounting in a TO-247-3 package, with a maximum power dissipation of 625W and an operating temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 255ns and fall time of 82ns.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STY145N65M5 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 138A |
| Drain to Source Breakdown Voltage | 710V |
| Drain to Source Resistance | 15mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 82ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 20.3mm |
| Input Capacitance | 18.5nF |
| Lead Free | Lead Free |
| Length | 15.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 15mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ V |
| Turn-Off Delay Time | 88ns |
| Turn-On Delay Time | 255ns |
| Width | 5.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STY145N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STY145N65M5 to view detailed technical specifications.
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