N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 60A continuous drain current. Offers low on-resistance of 50mΩ (Rds On Max: 55mR) and a maximum power dissipation of 560W. This through-hole component, housed in a TO-247-3 package, exhibits fast switching characteristics with turn-on/off delay times of 55ns and a fall time of 76ns. Designed with Zener protection and a threshold voltage of 4V, it operates within a temperature range of -65°C to 150°C.
PackageTO-247-3
Current Rating60A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STY60NM60 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 60A |
| Current Rating | 60A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 50mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 76ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.3mm |
| Input Capacitance | 7.3nF |
| Lead Free | Lead Free |
| Length | 5.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 560W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 560W |
| Radiation Hardening | No |
| Rds On Max | 55mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 55ns |
| DC Rated Voltage | 600V |
| Width | 5.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STY60NM60 Datasheet
Download the complete datasheet for Stmicroelectronics STY60NM60 to view detailed technical specifications.
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