
NPN bipolar junction transistor in a TO-220 package, featuring a 60V collector-emitter voltage (VCEO) and a maximum collector current of 1A. This component offers a maximum power dissipation of 2W and a minimum hFE of 15. It operates within a temperature range of -65°C to 150°C and is RoHS compliant. The transistor is designed for through-hole mounting.
Stmicroelectronics TIP29A technical specifications.
| Package/Case | TO-220 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 700mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 700mV |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 15.75mm |
| hFE Min | 15 |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Width | 4.6mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics TIP29A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
