PNP Bipolar Junction Transistor (BJT) in a TO-220 package. Features a 100V collector-emitter breakdown voltage and a maximum collector current of 1A. Offers a minimum DC current gain (hFE) of 15 and a maximum power dissipation of 2W. Designed for through-hole mounting with a lead-free and RoHS compliant construction. Operating temperature range spans from -65°C to 150°C.
PackageTO-220-3
Voltage100V
Current1A
Current Rating-1A
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Technical Specifications
Stmicroelectronics TIP30C technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 700mV |
| Current | 1A |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 15 |
| Lead Free | Lead Free |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 2W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Voltage | 100V |
| DC Rated Voltage | -100V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics TIP30C Datasheet
Download the complete datasheet for Stmicroelectronics TIP30C to view detailed technical specifications.
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