Bipolar (BJT) Transistor NPN 100 V 25 A 3MHz 125 W Through Hole TO-247-3
Temp Range150°C (TJ)
MountingThrough Hole
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Technical Specifications
Stmicroelectronics TIP35C technical specifications.
General
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 25A |
| Voltage - Collector Emitter Breakdown (Max) | 100V |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 5A, 25A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 15A, 4V |
| Power - Max | 125 W |
| Frequency - Transition | 3MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
Compliance
| Rohs Status | ROHS3 Compliant |
| Reach Status | REACH Unaffected |
| ECCN | EAR99 |
Datasheet
Stmicroelectronics TIP35C Datasheet
Download the complete datasheet for Stmicroelectronics TIP35C to view detailed technical specifications.
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