
NPN bipolar junction transistor (BJT) for power applications, featuring a 100V collector-emitter breakdown voltage and a maximum collector current of 25A. This through-hole component offers a maximum power dissipation of 125W and a transition frequency of 3MHz. Packaged in TO-247, it operates from -65°C to 150°C and is RoHS compliant.
Stmicroelectronics TIP35C technical specifications.
| Package/Case | TO-247 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 1.8V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 4V |
| Current Rating | 25A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| Height | 20.15mm |
| hFE Min | 10 |
| Lead Free | Lead Free |
| Length | 15.75mm |
| Max Collector Current | 25A |
| Max Frequency | 3MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 300 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| DC Rated Voltage | 100V |
| Width | 5.15mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics TIP35C to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
