NPN bipolar junction transistor (BJT) for power applications, featuring a 100V collector-emitter breakdown voltage and a maximum collector current of 25A. This through-hole component offers a maximum power dissipation of 125W and a transition frequency of 3MHz. Packaged in TO-247, it operates from -65°C to 150°C and is RoHS compliant.
Frequency3MHz
PackageTO-247
Current Rating25A
MountingThrough Hole
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Technical Specifications
Stmicroelectronics TIP35C technical specifications.
General
Package/Case
TO-247
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
1.8V
Collector Emitter Voltage (VCEO)
100V
Collector-emitter Voltage-Max
4V
Current Rating
25A
Emitter Base Voltage (VEBO)
5V
Frequency
3MHz
Gain Bandwidth Product
3MHz
Height
20.15mm
hFE Min
10
Lead Free
Lead Free
Length
15.75mm
Max Collector Current
25A
Max Frequency
3MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
125W
Mount
Through Hole
Number of Elements
1
Package Quantity
300
Packaging
Rail/Tube
Polarity
NPN
Power Dissipation
125W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
3MHz
DC Rated Voltage
100V
Width
5.15mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics TIP35C Datasheet
Download the complete datasheet for Stmicroelectronics TIP35C to view detailed technical specifications.
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