
Complementary power transistors designed for through-hole mounting in a TO-247 package. Featuring a 100V collector-emitter breakdown voltage and a maximum collector current of 25A, these NPN and PNP devices offer a maximum power dissipation of 125W. With a minimum DC current gain (hFE) of 25 and a transition frequency of 3MHz, they operate across a wide temperature range from -65°C to 150°C. These RoHS compliant and lead-free components are supplied in rail/tube packaging.
Stmicroelectronics TIP35CW technical specifications.
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