
PNP Bipolar Junction Transistor (BJT) in a TO-220-3 package. Features a maximum collector current of 6A and a collector-emitter breakdown voltage of 100V. Offers a minimum DC current gain (hFE) of 15 and a maximum collector-emitter saturation voltage of 1.5V. Operates within a temperature range of -65°C to 150°C with a maximum power dissipation of 65W. Through-hole mounting design.
Stmicroelectronics TIP42C technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | -100V |
| Collector-emitter Voltage-Max | 1.5V |
| Current Rating | -6A |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 3MHz |
| Height | 9.15mm |
| hFE Min | 15 |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Collector Current | 6A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 65W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -100V |
| Width | 4.6mm |
| Rohs Status | ROHS3 Compliant |
| Radiation Hardening | No |
| Reach Svhc | No SVHC |
| Lead Free | Yes |
Download the complete datasheet for Stmicroelectronics TIP42C to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
