Eight NPN Darlington transistor arrays in a DIP package, featuring a 50V collector-emitter breakdown voltage and 500mA continuous collector current. These through-hole mounted devices offer a minimum hFE of 1000 and a maximum power dissipation of 2.25W, operating from -20°C to 85°C. The arrays are RoHS compliant and designed for efficient switching applications.
PackageDIP
Current Rating500mA
MountingThrough Hole
PolarityNPN
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Technical Specifications
Stmicroelectronics ULN2801A technical specifications.
General
Package/Case
DIP
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
1.1V
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
1.6V
Continuous Collector Current
500mA
Current Rating
500mA
hFE Min
1000
Lead Free
Lead Free
Max Collector Current
500mA
Max Operating Temperature
85°C
Min Operating Temperature
-20°C
Max Output Voltage
50V
Max Power Dissipation
2.25W
Mount
Through Hole
Number of Elements
8
Output Current
500mA
Output Voltage
50V
Package Quantity
20
Packaging
Rail/Tube
Polarity
NPN
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
DC Rated Voltage
50V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics ULN2801A Datasheet
Download the complete datasheet for Stmicroelectronics ULN2801A to view detailed technical specifications.
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