Eight NPN Darlington transistor arrays in a DIP package, featuring a 50V collector-emitter breakdown voltage and 500mA continuous collector current. These through-hole mounted devices offer a minimum hFE of 1000 and a maximum power dissipation of 2.25W, operating from -20°C to 85°C. The arrays are RoHS compliant and designed for efficient switching applications.
PackageDIP
Current Rating500mA
MountingThrough Hole
PolarityNPN
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Technical Specifications
Stmicroelectronics ULN2801A technical specifications.
General
| Package/Case | DIP |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 1.1V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 1.6V |
| Continuous Collector Current | 500mA |
| Current Rating | 500mA |
| hFE Min | 1000 |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -20°C |
| Max Output Voltage | 50V |
| Max Power Dissipation | 2.25W |
| Mount | Through Hole |
| Number of Elements | 8 |
| Output Current | 500mA |
| Output Voltage | 50V |
| Package Quantity | 20 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics ULN2801A Datasheet
Download the complete datasheet for Stmicroelectronics ULN2801A to view detailed technical specifications.
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