
Fully Autoprotected Power MOSFET, OMNIFET II™ series, featuring a 40V drain-to-source breakdown voltage and 12A continuous drain current. This low-side driver IC offers 35mΩ drain-to-source resistance and 74W maximum power dissipation. Integrated fault protection includes over-voltage and over-temperature safeguards. Packaged in a DPAK for surface mounting, it operates from -40°C to 150°C.
Stmicroelectronics VND14NV04 technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 12A |
| Current Rating | 12A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 35mR |
| Fault Protection | Over Voltage, Over Temperature |
| Interface | On/Off |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Output Current | 12A |
| Max Power Dissipation | 74W |
| Max Supply Current | 100uA |
| Mount | Surface Mount |
| Number of Outputs | 1 |
| Output Configuration | Low Side |
| Output Current | 12A |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Power Dissipation | 74W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | OMNIFET II™, VIPower™ |
| Supply Current | 100uA |
| DC Rated Voltage | 40V |
| Weight | 0.01164oz |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics VND14NV04 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
