
Fully Autoprotected Power MOSFET, OMNIFET II™ series, featuring a 40V drain-to-source breakdown voltage and 12A continuous drain current. This low-side driver IC offers 35mΩ drain-to-source resistance and 74W maximum power dissipation. Integrated fault protection includes over-voltage and over-temperature safeguards. Packaged in a DPAK for surface mounting, it operates from -40°C to 150°C.
Stmicroelectronics VND14NV04 technical specifications.
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