Fully autopreotected power MOSFET driver with 40V drain-to-source breakdown voltage and 12A continuous drain current. Features low on-state resistance of 35mR and integrated over-voltage and over-temperature fault protection. This through-hole component offers a 12A maximum output current and operates from -40°C to 150°C. Designed for low-side output configuration, it is RoHS compliant and packaged in a TO-251 case.
PackageTO-251
Current100uA
MountingThrough Hole
Power74W
Quick Jump:
Technical Specifications
Stmicroelectronics VND14NV04-1-E technical specifications.
General
| Package/Case | TO-251 |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 35mR |
| Fault Protection | Over Voltage, Over Temperature |
| Interface | On/Off |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Output Current | 12A |
| Max Power Dissipation | 74W |
| Max Supply Current | 100uA |
| Mount | Through Hole |
| Number of Outputs | 1 |
| On-State Resistance | 35mR |
| Output Configuration | Low Side |
| Output Current | 12A |
| Output Current per Channel | 12A |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Power Dissipation | 74W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | OMNIFET III™, VIPower™ |
| Supply Current | 100uA |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics VND14NV04-1-E Datasheet
Download the complete datasheet for Stmicroelectronics VND14NV04-1-E to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
