Fully autopreotected power MOSFET driver with 40V drain-to-source breakdown voltage and 12A continuous drain current. Features low on-state resistance of 35mR and integrated over-voltage and over-temperature fault protection. This through-hole component offers a 12A maximum output current and operates from -40°C to 150°C. Designed for low-side output configuration, it is RoHS compliant and packaged in a TO-251 case.
PackageTO-251
Current100uA
MountingThrough Hole
Power74W
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Technical Specifications
Stmicroelectronics VND14NV04-1-E technical specifications.
General
Package/Case
TO-251
Continuous Drain Current (ID)
12A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
35mR
Fault Protection
Over Voltage, Over Temperature
Interface
On/Off
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Output Current
12A
Max Power Dissipation
74W
Max Supply Current
100uA
Mount
Through Hole
Number of Outputs
1
On-State Resistance
35mR
Output Configuration
Low Side
Output Current
12A
Output Current per Channel
12A
Package Quantity
75
Packaging
Rail/Tube
Power Dissipation
74W
Radiation Hardening
No
RoHS Compliant
Yes
Series
OMNIFET III™, VIPower™
Supply Current
100uA
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics VND14NV04-1-E Datasheet
Download the complete datasheet for Stmicroelectronics VND14NV04-1-E to view detailed technical specifications.
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