Fully autopreotected power MOSFET with 40V drain-to-source breakdown voltage and 3.5A continuous drain current. Features low-side output configuration in a DPAK surface-mount package. Provides over-voltage and over-temperature fault protection. Offers 120mΩ drain-to-source resistance and 35W power dissipation.
PackageDPAK
Current100uA
Resistance120mR
MountingSurface Mount
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Technical Specifications
Stmicroelectronics VND3NV04 technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 120mR |
| Fault Protection | Over Voltage, Over Temperature |
| Interface | On/Off |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Output Current | 3.5A |
| Max Power Dissipation | 35W |
| Max Supply Current | 100uA |
| Mount | Surface Mount |
| Number of Outputs | 1 |
| Output Configuration | Low Side |
| Output Current | 3.5A |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Power Dissipation | 35W |
| Radiation Hardening | No |
| Resistance | 120mR |
| RoHS Compliant | No |
| Series | OMNIFET II™, VIPower™ |
| Supply Current | 100uA |
| Weight | 0.01164oz |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Stmicroelectronics VND3NV04 Datasheet
Download the complete datasheet for Stmicroelectronics VND3NV04 to view detailed technical specifications.
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