Fully autopreotected power MOSFET with 40V drain-to-source breakdown voltage and 3.5A continuous drain current. Features low-side output configuration in a DPAK surface-mount package. Provides over-voltage and over-temperature fault protection. Offers 120mΩ drain-to-source resistance and 35W power dissipation.
PackageDPAK
Current100uA
Resistance120mR
MountingSurface Mount
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Technical Specifications
Stmicroelectronics VND3NV04 technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
3.5A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
120mR
Fault Protection
Over Voltage, Over Temperature
Interface
On/Off
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Output Current
3.5A
Max Power Dissipation
35W
Max Supply Current
100uA
Mount
Surface Mount
Number of Outputs
1
Output Configuration
Low Side
Output Current
3.5A
Package Quantity
75
Packaging
Rail/Tube
Power Dissipation
35W
Radiation Hardening
No
Resistance
120mR
RoHS Compliant
No
Series
OMNIFET II™, VIPower™
Supply Current
100uA
Weight
0.01164oz
Compliance
RoHS
Not CompliantNo
Datasheet
Stmicroelectronics VND3NV04 Datasheet
Download the complete datasheet for Stmicroelectronics VND3NV04 to view detailed technical specifications.
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