
Fully autopreotected power MOSFET with 40V drain-to-source breakdown voltage and 3.5A continuous drain current. Features low-side output configuration in a DPAK surface-mount package. Provides over-voltage and over-temperature fault protection. Offers 120mΩ drain-to-source resistance and 35W power dissipation.
Stmicroelectronics VND3NV04 technical specifications.
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