High-side driver IC featuring a single low-side output configuration. This component offers a 40V drain-to-source breakdown voltage and a continuous drain current of 3.5A, with a low on-resistance of 120mR. Designed for robust operation, it includes over-voltage and over-temperature fault protection. The device operates within a -40°C to 150°C temperature range and is packaged in a TO-251-3 (IPAK) through-hole mount.
PackageTO-251-3
Current100uA
MountingThrough Hole
Power35W
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Technical Specifications
Stmicroelectronics VND3NV04-1-E technical specifications.
General
Package/Case
TO-251-3
Continuous Drain Current (ID)
3.5A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
120mR
Fall Time
250ns
Fault Protection
Over Voltage, Over Temperature
Interface
On/Off
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Output Current
3.5A
Max Power Dissipation
35W
Max Supply Voltage
6V
Mount
Through Hole
Number of Outputs
1
Output Configuration
Low Side
Output Current
3.5A
Packaging
Rail/Tube
Power Dissipation
35W
Radiation Hardening
No
RoHS Compliant
Yes
Series
OMNIFET II™, VIPower™
Supply Current
100uA
Weight
0.139332oz
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics VND3NV04-1-E Datasheet
Download the complete datasheet for Stmicroelectronics VND3NV04-1-E to view detailed technical specifications.
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