High-side driver IC featuring a single low-side output configuration. This component offers a 40V drain-to-source breakdown voltage and a continuous drain current of 3.5A, with a low on-resistance of 120mR. Designed for robust operation, it includes over-voltage and over-temperature fault protection. The device operates within a -40°C to 150°C temperature range and is packaged in a TO-251-3 (IPAK) through-hole mount.
PackageTO-251-3
Current100uA
MountingThrough Hole
Power35W
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Technical Specifications
Stmicroelectronics VND3NV04-1-E technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 120mR |
| Fall Time | 250ns |
| Fault Protection | Over Voltage, Over Temperature |
| Interface | On/Off |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Output Current | 3.5A |
| Max Power Dissipation | 35W |
| Max Supply Voltage | 6V |
| Mount | Through Hole |
| Number of Outputs | 1 |
| Output Configuration | Low Side |
| Output Current | 3.5A |
| Packaging | Rail/Tube |
| Power Dissipation | 35W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | OMNIFET II™, VIPower™ |
| Supply Current | 100uA |
| Weight | 0.139332oz |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics VND3NV04-1-E Datasheet
Download the complete datasheet for Stmicroelectronics VND3NV04-1-E to view detailed technical specifications.
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