
Fully autopreotected power MOSFET driver with 40V drain-to-source breakdown voltage and 3.5A continuous drain current. Features low side output configuration, 120mΩ drain-to-source resistance, and 35W maximum power dissipation. Includes over-voltage and over-temperature fault protection with on/off interface. Packaged in DPAK for surface mounting, this component operates from -40°C to 150°C.
Stmicroelectronics VND3NV0413TR technical specifications.
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