Fully autopreotected power MOSFET driver with 40V drain-to-source breakdown voltage and 3.5A continuous drain current. Features low side output configuration, 120mΩ drain-to-source resistance, and 35W maximum power dissipation. Includes over-voltage and over-temperature fault protection with on/off interface. Packaged in DPAK for surface mounting, this component operates from -40°C to 150°C.
PackageDPAK
Current100uA
Current Rating3.5A
MountingSurface Mount
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Technical Specifications
Stmicroelectronics VND3NV0413TR technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 3.5A |
| Current Rating | 3.5A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 120mR |
| Fault Protection | Over Voltage, Over Temperature |
| Interface | On/Off |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Output Current | 3.5A |
| Max Power Dissipation | 35W |
| Max Supply Current | 100uA |
| Mount | Surface Mount |
| Number of Outputs | 1 |
| Output Configuration | Low Side |
| Output Current | 3.5A |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Power Dissipation | 35W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | OMNIFET II™, VIPower™ |
| Supply Current | 100uA |
| DC Rated Voltage | 40V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics VND3NV0413TR Datasheet
Download the complete datasheet for Stmicroelectronics VND3NV0413TR to view detailed technical specifications.
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