N-channel power MOSFET driver with OMNIFET II™ and VIPower™ technology, featuring a TO-252 surface mount package. Delivers 5A continuous drain current and 70V drain-to-source breakdown voltage, with a low 200mΩ on-state resistance. Offers integrated over-voltage and over-temperature fault protection, with a 3V threshold voltage and 250ns turn-on delay. Operates from -40°C to 150°C, with a maximum output current of 3.5A and 60W power dissipation.
PackageTO-252
Current250uA
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Stmicroelectronics VND5N07-E technical specifications.
General
Package/Case
TO-252
Continuous Drain Current (ID)
5A
Drain to Source Breakdown Voltage
70V
Drain to Source Resistance
200mR
Fault Protection
Over Voltage, Over Temperature
Interface
On/Off
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Output Current
3.5A
Max Power Dissipation
60W
Max Supply Voltage
70V
Mount
Surface Mount
Number of Channels
1
Number of Outputs
1
On-State Resistance
200mR
Output Configuration
Low Side
Output Current
5A
Output Voltage
55V
Package Quantity
75
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
60W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
OMNIFET II™, VIPower™
Supply Current
250uA
Threshold Voltage
3V
Turn-Off Delay Time
5us
Turn-On Delay Time
250ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics VND5N07-E Datasheet
Download the complete datasheet for Stmicroelectronics VND5N07-E to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
