
N-channel power MOSFET driver with 70V drain-to-source breakdown voltage and 20A continuous drain current. Features 50mΩ drain-to-source resistance and 83W maximum power dissipation. Integrated over-voltage and over-temperature fault protection. Designed for through-hole mounting in a TO-220 package, offering a low-side output configuration.
Stmicroelectronics VNP20N07 technical specifications.
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