N-channel Power MOSFET driver with 70V drain-source breakdown voltage and 35A continuous drain current. Features low 28mΩ on-state resistance and 125W maximum power dissipation. This through-hole component is housed in a TO-220 package and operates up to 150°C. Fully autoprotected OMNIFET technology ensures reliable performance.
PackageTO-220
Voltage70V
Current35A
MountingThrough Hole
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Technical Specifications
Stmicroelectronics VNP35N07-E technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 35A |
| Current | 35A |
| Drain to Source Breakdown Voltage | 70V |
| Drain to Source Resistance | 28mR |
| Drain to Source Voltage (Vdss) | 80V |
| Height | 15.75mm |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Max Output Current | 35A |
| Max Power Dissipation | 125W |
| Max Supply Voltage | 70V |
| Mount | Through Hole |
| Number of Outputs | 1 |
| On-State Resistance | 28mR |
| Output Current | 35A |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OMNIFET™ |
| Threshold Voltage | 3V |
| Voltage | 70V |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics VNP35N07-E Datasheet
Download the complete datasheet for Stmicroelectronics VNP35N07-E to view detailed technical specifications.
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