Fully autopreotected power MOSFET driver, OMNIFET II series, featuring two low-side outputs. This surface mount SOIC package component offers a 45V drain-to-source breakdown voltage and a continuous drain current of 1.7A. Integrated fault protection includes over-voltage and over-temperature capabilities, with a maximum power dissipation of 4W. Operating across a wide temperature range from -40°C to 150°C, it supports an on/off interface and is RoHS compliant.
PackageSOIC
Voltage40V
Current1.7A
MountingSurface Mount
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Technical Specifications
Stmicroelectronics VNS1NV04DPTR-E technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 1.7A |
| Current | 1.7A |
| Drain to Source Breakdown Voltage | 45V |
| Drain to Source Resistance | 250mR |
| Drain to Source Voltage (Vdss) | 45V |
| Fall Time | 200ns |
| Fault Protection | Over Voltage, Over Temperature |
| Height | 1.5mm |
| Interface | On/Off |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Output Current | 1.7A |
| Max Power Dissipation | 4W |
| Max Supply Voltage | 40V |
| Mount | Surface Mount |
| Nominal Vgs | 500mV |
| Number of Outputs | 2 |
| Output Configuration | Low Side |
| Output Current | 1.7A |
| Packaging | Tape and Reel |
| Power Dissipation | 4W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OMNIFET II™, VIPower™ |
| Supply Current | 100uA |
| Threshold Voltage | 500mV |
| Voltage | 40V |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics VNS1NV04DPTR-E Datasheet
Download the complete datasheet for Stmicroelectronics VNS1NV04DPTR-E to view detailed technical specifications.
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