Fully autopreotected power MOSFET driver, OMNIFET II series, featuring two low-side outputs. This surface mount SOIC package component offers a 45V drain-to-source breakdown voltage and a continuous drain current of 1.7A. Integrated fault protection includes over-voltage and over-temperature capabilities, with a maximum power dissipation of 4W. Operating across a wide temperature range from -40°C to 150°C, it supports an on/off interface and is RoHS compliant.
PackageSOIC
Voltage40V
Current1.7A
MountingSurface Mount
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Technical Specifications
Stmicroelectronics VNS1NV04DPTR-E technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
1.7A
Current
1.7A
Drain to Source Breakdown Voltage
45V
Drain to Source Resistance
250mR
Drain to Source Voltage (Vdss)
45V
Fall Time
200ns
Fault Protection
Over Voltage, Over Temperature
Height
1.5mm
Interface
On/Off
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Output Current
1.7A
Max Power Dissipation
4W
Max Supply Voltage
40V
Mount
Surface Mount
Nominal Vgs
500mV
Number of Outputs
2
Output Configuration
Low Side
Output Current
1.7A
Packaging
Tape and Reel
Power Dissipation
4W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
OMNIFET II™, VIPower™
Supply Current
100uA
Threshold Voltage
500mV
Voltage
40V
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics VNS1NV04DPTR-E Datasheet
Download the complete datasheet for Stmicroelectronics VNS1NV04DPTR-E to view detailed technical specifications.
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