Dual-channel peripheral driver IC featuring N-channel MOSFET output configuration. Delivers 3.5A continuous output current per channel with a 45V drain-to-source breakdown voltage. Integrated fault protection includes over-voltage and over-temperature safeguards. Operates from -40°C to 150°C with a 4W maximum power dissipation. Surface-mount SOIC package with simple on/off interface.
PackageSOIC
Current100uA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics VNS3NV04D technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Breakdown Voltage | 45V |
| Drain to Source Resistance | 120mR |
| Fault Protection | Over Voltage, Over Temperature |
| Gate to Source Voltage (Vgs) | 20V |
| Interface | On/Off |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Output Current | 3.5A |
| Max Power Dissipation | 4W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Number of Outputs | 2 |
| Output Configuration | Low Side |
| Output Current | 3.5A |
| Package Quantity | 100 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 4W |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Series | OMNIFET II™, VIPower™ |
| Supply Current | 100uA |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Stmicroelectronics VNS3NV04D Datasheet
Download the complete datasheet for Stmicroelectronics VNS3NV04D to view detailed technical specifications.
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