N-channel MOSFET transistor for general-purpose small signal applications. Features a continuous drain current of 300mA and a drain-source breakdown voltage of 70V. Offers a low drain-source on-resistance (Rds On) of 2 Ohms. Operates within a temperature range of -55°C to 150°C and is housed in a compact SOT-23-3 surface-mount package. RoHS compliant and lead-free.
PackageSOT-23-3
MountingSurface Mount
PolarityN-CHANNEL
Power350mW
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Technical Specifications
Vishay 2N7002K-T1-E3 technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
300mA
Drain to Source Breakdown Voltage
70V
Drain to Source Resistance
7.5R
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
2R
Gate to Source Voltage (Vgs)
20V
Height
1.02mm
Input Capacitance
30pF
Lead Free
Lead Free
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200mW
Mount
Surface Mount
Nominal Vgs
2V
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
350mW
Radiation Hardening
No
Rds On Max
2R
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
2V
Turn-Off Delay Time
35ns
Turn-On Delay Time
25ns
Weight
0.050717oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Vishay 2N7002K-T1-E3 Datasheet
Download the complete datasheet for Vishay 2N7002K-T1-E3 to view detailed technical specifications.
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