
N-channel MOSFET transistor for general-purpose small signal applications. Features a continuous drain current of 300mA and a drain-source breakdown voltage of 70V. Offers a low drain-source on-resistance (Rds On) of 2 Ohms. Operates within a temperature range of -55°C to 150°C and is housed in a compact SOT-23-3 surface-mount package. RoHS compliant and lead-free.
Vishay 2N7002K-T1-E3 technical specifications.
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 300mA |
| Drain to Source Breakdown Voltage | 70V |
| Drain to Source Resistance | 7.5R |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 2R |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.02mm |
| Input Capacitance | 30pF |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
| Rds On Max | 2R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 25ns |
| Weight | 0.050717oz |
| Width | 1.4mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay 2N7002K-T1-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
