N-channel MOSFET, general purpose small signal transistor in a SOT-23 surface mount package. Features 60V drain-source breakdown voltage, 300mA continuous drain current, and 2 Ohm maximum drain-source on-resistance. Operates from -55°C to 150°C with a 350mW power dissipation. Includes 1V threshold voltage and 25ns turn-on delay.
PackageSOT-23
Voltage60V
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay 2N7002K-T1-GE3 technical specifications.
General
Package/Case
SOT-23
Continuous Drain Current (ID)
300mA
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
2R
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
2R
Gate to Source Voltage (Vgs)
20V
Height
1.02mm
Input Capacitance
30pF
Lead Free
Lead Free
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
350mW
Mount
Surface Mount
Nominal Vgs
2V
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
350mW
Radiation Hardening
No
Rds On Max
2R
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
1V
Turn-Off Delay Time
35ns
Turn-On Delay Time
25ns
Voltage
60V
Weight
0.050717oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Vishay 2N7002K-T1-GE3 Datasheet
Download the complete datasheet for Vishay 2N7002K-T1-GE3 to view detailed technical specifications.
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