PNP silicon epitaxial planar small-signal transistor for switching and AF amplifier applications. The device is rated for -45 V collector-emitter voltage, -50 V collector-base voltage, and -100 mA collector current with 310 mW power dissipation at 25 °C on fiberglass substrate. BC857B is the B gain group with DC current gain specified at 200 to 450 at VCE = 5 V and IC = 2 mA. It is supplied in a SOT-23 plastic package with 1 = base, 2 = emitter, and 3 = collector, and the family specifies a typical gain-bandwidth product of 150 MHz with 6 pF collector-base capacitance.
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Vishay BC857B technical specifications.
| Max Operating Temperature | 150 |
| RoHS | No |
| REACH | unknown |
| Military Spec | False |
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