Search Results for "1MBI100U4F-120L-50"

Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES

FUJI ELECTRIC 2MBI100U4A-120-50 IGBT Array & Module Transistor, N Channel, 150 A, 2.2 V, 540 W, 1.2 kV, Module

Insulated Gate Bipolar Transistor, 150A I(C), 1700V V(BR)CES, N-Channel, MODULE-4

6-PACK IGBT, MODULE, 100A, 1200V

Insulated Gate Bipolar Transistor, 1200A I(C), 1200V V(BR)CES, N-Channel, MODULE-4

Fuji Electric power module

100 Amp, 1700 Volt.