Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, M232, 7 PIN
Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, M232, 7 PIN

FUJI ELECTRIC 1MBI1200UE-330 IGBT Array & Module Transistor, 1.2 kA, 3.15 V, 14.7 kW, 3.3 kV, Module

FUJI ELECTRIC 1MBI1200U4C-170 IGBT Array & Module Transistor, Dual N Channel, 1.6 kA, 2.43 V, 7.35 kW, 1.7 kV, Module
Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, M116, 5 PIN
Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel, M127, 4 PIN
Insulated Gate Bipolar Transistor, 900A I(C), 1200V V(BR)CES, N-Channel, MODULE-4
Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, M127, 4 PIN
Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, M138, 4 PIN
Insulated Gate Bipolar Transistor, 800A I(C), 1200V V(BR)CES, N-Channel, MODULE-4
Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel, M128, 4 PIN
Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel, M129, 4 PIN
Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-4
Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-4