Search Results for "7MBR35SB-120-50"

IGBT, 7 PACK MOD, 1200V, 35A, M712

IGBT, 7 PACK MOD, 1400V, 35A, M712

Insulated Gate Bipolar Transistor, 50A I(C), 1400V V(BR)CES, N-Channel, MODULE-35

Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, MODULE-24

Insulated Gate Bipolar Transistor, 35A I(C), 1400V V(BR)CES

Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES

Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel

IGBT, 7 PACK MOD, 1200V, 35A, M711

Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, MODULE-24

Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, MODULE-35

FUJI ELECTRIC 7MBR30SA-060-50 IGBT Array & Module Transistor, 7 Pack, N Channel, 30 A, 1.8 V, 120 W, 600 V, Module

IGBT, 7 PACK MOD, 600V, 30A, M711

Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel

FUJI ELECTRIC 7MBR25SA-120-50 IGBT Array & Module Transistor, 7 Pack, N Channel, 25 A, 2.1 V, 180 W, 1.2 kV, Module

Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel

IGBT, 7 PK, V SER, 75A, 1200V, M720

IGBT, 7 PK, V SER, 25A, 1200V, M719

Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, MODULE-21

IGBT, 7 PACK MOD, 1200V, 25A, M711

Silicon Controlled Rectifier, 47.1A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, MODULE-26