Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-264AA, TO-264, 3 PIN
Insulated Gate Bipolar Transistor, 120A I(C), 600V V(BR)CES, N-Channel, ISOTOP-4
Power Field-Effect Transistor, 7A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
Power Field-Effect Transistor, 4.4A I(D), 1000V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
Power Field-Effect Transistor, 33A I(D), 1000V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4
Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247