BLF2425M9LS140J - Electronic Components Search

RF Power LDMOS Transistor 140W 28V 2.45GHz

SOT502B

Active

Frequency Range: 2400 - 2500MHz

Output Power (P1dB): 140W

Drain-Source Voltage (VDS): 28V

Power Gain (Gp): 19dB

RF Power LDMOS Transistor 2.4 - 2.5 GHz 140W

SOT502B

Active

Frequency Range: 2400 to 2500MHz

Output Power (Pout): 140W

Power Gain: 19dB

Drain Efficiency: 59%

65V 1.3A 2.45GHz N-Channel MOSFET

Volume Production

Continuous Drain Current (ID): 1.3A

Drain to Source Resistance: 69mR

Drain to Source Voltage (Vdss): 65V

Frequency: 2.45GHz

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2

FLATPACK, R-CDFP-F2

Obsolete

Number of Terminals: 2

Terminal Position: DUAL

Number of Elements: 1

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