NXP BLF6G21-10G RF FET Transistor, 65 V, 10 W, 2.11 GHz, 2.17 GHz, SOT-538
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2
TRANSISTOR PWR LDMOS SOT538A
Trans RF MOSFET N-CH 65V 3-Pin CDIP SMD T/R
