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ISC0702NLSATMA1OptiMOS™ 5

Infineon Technologies

ISC0702NLSATMA1 N-Channel 60V 135A OptiMOS 5 Power MOSFET

PG-TDSON-8

Active

Drain-Source Breakdown Voltage (Vds): 60V

Continuous Drain Current (Id) at Tc=25°C: 135A

Continuous Drain Current (Id) at Ta=25°C: 23A

Static Drain-Source On-Resistance (Rds on) max at Vgs=10V: 2.8mOhms

N-Channel MOSFET 30V 24A 2.6mR 150°C Surface Mount

SMALL OUTLINE, R-PDSO-F5

Active

Continuous Drain Current (ID): 24A

Drain to Source Resistance: 2.2mR

Drain to Source Voltage (Vdss): 30V

Fall Time: 3.6ns