Trans IGBT Module N-CH 1200V 28A 130000mW 23-Pin EASY1B-1 Tray
Insulated Gate Bipolar Transistor, 28A I(C), 1200V V(BR)CES, N-Channel, MODULE-21
Insulated Gate Bipolar Transistor, 28A I(C), 1200V V(BR)CES, N-Channel, MODULE-22
Insulated Gate Bipolar Transistor, 28A I(C), 1200V V(BR)CES, N-Channel, MODULE-23
EasyPIM™ module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC/pre-applied Thermal Interface Material
Insulated Gate Bipolar Transistor,
