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Insulated Gate Bipolar Transistor, 28A I(C), 1200V V(BR)CES, N-Channel, MODULE-21

MODULE-21

Active

Package/Case: Module

Collector Emitter Breakdown Voltage: 1.2kV

Collector Emitter Saturation Voltage: 1.85V

Collector Emitter Voltage (VCEO): 1.85V

FP15R12W1T4_B11

Insulated Gate Bipolar Transistor, 28A I(C), 1200V V(BR)CES, N-Channel, MODULE-22

MODULE-22

Active

Max Operating Temperature: 175

Number of Terminals: 23

Terminal Position: UPPER

Pin Count: 22