Search Results for &quot; FQA6N80_F109 &quot;

N-Channel MOSFET 800V 6.3A 30V Through Hole QFET

Obsolete

Continuous Drain Current (ID): 6.3A

Drain to Source Breakdown Voltage: 800V

Drain to Source Resistance: 1.95R

Drain to Source Voltage (Vdss): 800V

FQA6N90_F109

N-CHANNEL MOSFET 900V 6.4A 1.9R 150°C Through Hole Rail/Tube

Obsolete

Continuous Drain Current (ID): 6.4A

Drain to Source Breakdown Voltage: 900V

Drain to Source Resistance: 1.9R

Drain to Source Voltage (Vdss): 900V

N-Channel MOSFET 800V 7.2A 30V Through Hole

Obsolete

Continuous Drain Current (ID): 7.2A

Drain to Source Breakdown Voltage: 800V

Drain to Source Resistance: 1.5R

Drain to Source Voltage (Vdss): 800V

FQA8N80_F109

N-Channel MOSFET 800V 8.4A Through Hole

Obsolete

Continuous Drain Current (ID): 8.4A

Drain to Source Breakdown Voltage: 800V

Drain to Source Resistance: 1.2R

Fall Time: 80ns

Fairchild

Power Field-Effect Transistor, 7.2A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PN, 3 PIN

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Pin Count: 3

Search Results for "FQA6N80_F109"

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FQA6N80_F109

N-Channel MOSFET 800V 6.3A 30V Through Hole QFET

Obsolete

Continuous Drain Current (ID): 6.3A

Drain to Source Breakdown Voltage: 800V

Drain to Source Resistance: 1.95R

Drain to Source Voltage (Vdss): 800V

FQA6N90_F109

N-CHANNEL MOSFET 900V 6.4A 1.9R 150°C Through Hole Rail/Tube

Obsolete

Continuous Drain Current (ID): 6.4A

Drain to Source Breakdown Voltage: 900V

Drain to Source Resistance: 1.9R

Drain to Source Voltage (Vdss): 900V

N-Channel MOSFET 800V 7.2A 30V Through Hole

Obsolete

Continuous Drain Current (ID): 7.2A

Drain to Source Breakdown Voltage: 800V

Drain to Source Resistance: 1.5R

Drain to Source Voltage (Vdss): 800V

FQA8N80_F109

N-Channel MOSFET 800V 8.4A Through Hole

Obsolete

Continuous Drain Current (ID): 8.4A

Drain to Source Breakdown Voltage: 800V

Drain to Source Resistance: 1.2R

Fall Time: 80ns

Fairchild

Power Field-Effect Transistor, 7.2A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PN, 3 PIN