Search Results for &quot; FQB7N60TM_WS &quot;

N-Channel Power MOSFET, 600V, 7.4A, D2PAK Package, -55°C to 150°C

Volume Production

Package/Case: D2PAK

Continuous Drain Current (ID): 7.4A

Drain to Source Breakdown Voltage: 600V

Drain to Source Resistance: 1R

Fairchild

Power Field-Effect Transistor, 7.4A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AB, PLASTIC, D2PAK-3/2

PLASTIC, D2PAK-3/2

Transferred

Max Operating Temperature: 150

Number of Terminals: 2

Terminal Position: SINGLE

JEDEC Package Code: TO-262AB

FQB8N60CTM_WS

MOSFET 600V, NCH MOSFET

Volume Production

Package/Case: TO-263-3

Continuous Drain Current (ID): 7.5A

Drain to Source Voltage (Vdss): 600V

Input Capacitance: 1.255nF

Search Results for "FQB7N60TM_WS"

Filters

N-Channel Power MOSFET, 600V, 7.4A, D2PAK Package, -55°C to 150°C

Volume Production

Package/Case: D2PAK

Continuous Drain Current (ID): 7.4A

Drain to Source Breakdown Voltage: 600V

Drain to Source Resistance: 1R

Fairchild

Power Field-Effect Transistor, 7.4A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AB, PLASTIC, D2PAK-3/2

PLASTIC, D2PAK-3/2

Transferred

Max Operating Temperature: 150

Number of Terminals: 2

Terminal Position: SINGLE

JEDEC Package Code: TO-262AB

FQB8N60CTM_WS

MOSFET 600V, NCH MOSFET